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Meshakar No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Capacitance versus reverse applied voltage typical values. Application Specific Discretes A. The clamping voltage is given by the following formula: A3 the high efficiency of the ESD protection: Figure A8 shows that in such a condition, i. Peak forward voltage drop b6c peak forward current typical values. Analog crosstalk measurements 50? Typical analog crosstalk measurements Analog crosstalk dB 0 1 10 frequency MHz 1, Figure A5 gives the measurement circuit for the analog crosstalk application.

The perturbed line will be more affected if it works with low voltage signal or high load impedance few k? No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. A3a and -Vf negative way, Fig. For these kind of disturbances it clamps close to ground voltage as shown in Fig. ESD protection is achieved by clamping the unwanted overvoltage.

No b6 disturbance was noted on the concerned line. By taking into account the following hypothesis: This phenomenon has to be taken into account when the drivers impose fast digital data or high frequency analog signals in the disturbing line. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

A3 the high efficiency of the ESD protection: Specifications mentioned in this publication are subject to change without notice. The clamping voltage is given by the following formula: In usual frequency range of analog signals up to MHz the effect on disturbed line is esdz6v1 than dB. Remaining voltage during ESD esfa6v1 a: Digital crosstalk measurements configuration Figure A7 shows the measurement circuit used to quantify the crosstalk effect in a classical digital application. The measurements performed with falling edges give an impact within the same range.

This publication supersedes and replaces all information previously supplied. Relative variation of leakage current versus junction temperature typical values. It is also important to note that in this approximation the parasitic inductance effect was not taken into account. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for esda66v1 infringement of patents or other rights of third parties which may result from its use. This part of the VG1 signal represents the effect of the crosstalk phenomenon of the line 1 on the essda6v1 2.

Peak power dissipation versus initial junction temperature. Necessary cookies are absolutely essential for the website to function properly. This category only includes cookies that ensures basic functionalities and security features of the website. These cookies do not store any personal information.

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PJEC3V3M1FN2 - Bidirectional ESD protection of one line

Application Specific Discretes A. Type max. Rd typ. Note 3:? Ipp A

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Also Titled. Patched life. Popov, Stale, Published. Skopje: Makedonska knjiga, Physical Description. Available in the National Library of Australia collection. Author: Popov, Stale, ; Format: Book; 2 v.

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